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| Название | Производитель | Описание | Цена | ||
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KGT25N120NDA | Korea Electronics | IGBT, DC=50A, Vce(on)=4.0V, Pd=310W, V(br)ceo=1200V, корпус-TO-3P(N)-E-3, tmax-150°C .. | 185.00 р. |
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MGY30N60D | ON Semiconductor | Insulated Gate Bipolar Transistor with Anti-Parallel Diode .. | 338.00 р. |
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NGD8201AG | IGBT+Z 375V, 20A, 125W (Logic-Level, for Ignition) .. | 124.00 р. |
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NGD8201AN | ON Semiconductor | Ignition IGBT 20 A, 400 V, N.Channel DPAK .. | 115.00 р. |
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NGD8201NG | ON Semiconductor | Ignition IGBT N−Channel, Vces=440V, Ic=20A, Pd=125W, Vce(on)=1,3V .. | 120.00 р. |
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RJH3044 | Renesas | IGBT+D 330V 50A .. | 126.00 р. |
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RJH3047 | Hitachi | Silicon N Channel IGBT High Speed Power Switching, Vces=330V, Ic=50A, Icp=200A, Vce(sat)=1,5V .. | 170.00 р. |
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RJH30E2 | Hitachi | IGBT 360V,30A_с диодом_with diod .. | 90.00 р. |
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RJH30H2A | Renesas | Silicon N-Channel IGBT High Speed Power Switching, Vces=360V, Ic=35A,Pc=60W .. | 157.00 р. |
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RJH60F5DPK | Hitachi | транзистор IGBT, 600 В, 80 А .. | 325.00 р. |
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RJH60F5DPQ-A0 | Renesas | Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state .. | 330.00 р. |
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RJH60F7ADPK | Hitachi | Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-3P Box .. | 400.00 р. |
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RJH60F7DPQ-A0 | Renesas | IGBT, DC=50A, Vce(on)=1.8V, Pd=329W, V(br)ceo=600V, корпус-TO-247A-3, tmax-150°C .. | 175.00 р. |
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RJP30E2 | Hitachi | Silicon N Channel IGBT High Speed Power Switching , Vces=360V, Ic=35A, Pc=25W, Vce(sat)=1,7V .. | 145.00 р. |
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RJP30E4 | Renesas | IGBT,Vces=360V, Ic=35A, Vcesat= 1,7V .. | 107.00 р. |
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