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| Название | Производитель | Описание | Цена | ||
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GT45F122 | Toshiba | IGBT; 300V; 200A; 25W; Usat=2.7V .. | 120.00 р. |
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GT50J325 | Toshiba | IGBT, DC=50A, Vce(on)=2.45V, Pd=240W, V(br)ceo=600V, корпус-TO-3P-3, tmax-150°C .. | 270.00 р. |
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GT50J327 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switc.. | 425.00 р. |
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GT50JR22 | Toshiba | Silicon N-Channel IGBT, Vces=600V, Ic=50A, Pc=230W, Vce(sat)=1,55V (Dedicated to Current-Re.. | 239.00 р. |
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GT50N322 | Toshiba | Military, mil-r-26 qualified, type rw, precision power, silicone coated, complete welded construc.. | 415.00 р. |
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GT60M303 | Toshiba | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT .. | 650.00 р. |
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GT60N321 | Toshiba | 1000V, 60A, 170W .. | 400.00 р. |
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GW40V60DF | ST MICROELECTRONICS | 600 V, 40 A very high speed trench gate field-stop IGBT .. | 302.00 р. |
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H15R1202 | Infineon Technologies | Транзисторы IGBT .. | 297.00 р. |
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H15R1203 | Infineon Technologies | Транзистор IGBT .. | 150.00 р. |
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H20R1202 | Infineon Technologies | Транзистор IGBT Reverse Conducting with monolithic body diode, Vces=1200V, Vce(sat)=1,55V, .. | 235.00 р. |
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H20R1203 orig | Infineon Technologies | Reverse conducting IGBT with monolithic body diode, Vces=1200V, Vce(sat)=1,48V, Ic=20A, Ptot=310W.. | 174.00 р. |
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H20R1203(IHW 20N120 R3) | Infineon Technologies | IGBT 1200В/20A/310Вт/Uкэ(нас)=1.48В Диод .. | 245.00 р. |
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H30R1202 (IHW30N120R2) | Infineon Technologies | IGBT 30A 1200V (IGBT300 W)( Diode135 W) .. | 135.00 р. |
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HGTG20N60A4 | Fairchild | IGBT, DC=70A, Vce(on)=2.7V, Pd=290W, V(br)ceo=600V, корпус-TO-247-3, tmax-150°C .. | 260.00 р. |
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